Oxide & Nitride Deposition Recipes
| Material | Temperature (ºC) | Pressure (mTorr) | Gas flow (sccm) | Power (W) | Deposition rate (nm/min) |
| SiO2 | 300 | 400 | 30 5%SiH4/N2, 700 N2O | 45 | 4 |
| SiO2 | 300 | 1000 | 170 5%SiH4/N2, 710 N2O | 30 | 40 |
| Si3N4 | 300 | 650 | 400 5%SiH4/N2, 20 NH3, 600 N2 | 40 (LF, Pulse: 7), 50 (RF, Pulse: 13) | 10 |
| Si3N4 | 300 | 1800 | 450 5%SiH2/N2, 10 NH3, 1000 N2, 1000 N2O | 160 (LF, Pulse: 10), 200 (RF, Pulse: 10) | 100 |
| Clean | 300 | 1300 | 150 80%CF4/O2 | 200 | – |