PECVD Recipes

Oxide & Nitride Deposition Recipes

Material Temperature (ÂșC) Pressure (mTorr) Gas flow (sccm) Power (W) Deposition rate (nm/min)
SiO2 300 400 30 5%SiH4/N2, 700 N2O 45 4
SiO2 300 1000 170 5%SiH4/N2, 710 N2O 30 40
Si3N4 300 650 400 5%SiH4/N2, 20 NH3, 600 N2 40 (LF, Pulse: 7), 50 (RF, Pulse: 13) 10
Si3N4 300 1800 450 5%SiH2/N2, 10 NH3, 1000 N2, 1000 N2O 160 (LF, Pulse: 10), 200 (RF, Pulse: 10) 100
Clean 300 1300 150 80%CF4/O2 200